Iris Publishers - Global Journal of Engineering Sciences (GJES)


Evidence of Electron Charging Induced Alternating Currents in Nanopillar Transistor




Authorized by Yue Min Wan



Study of electron charging in nanopillar transistor at 300K shows that elastic vibration is an automatic behavior in the device. The frequency observed in the drain-source current is found to agree with the charging frequency. Given a quantum dot of size ~10x10x9nm3, the maximum displacement estimated is 0.3nm. Once the displacement diminishes to zero, single-electron tunnel dominates the I-V. A forced vibration model is proposed to explain the correlation between surface charges and vibrations. When the distribution of charges is uniformly on each SiNx atom, vibration becomes stable and can yield homogenous damping current.

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